Admittedly, MTBF specifications are more suited to determining the average lifespan of an entire drive line that ships in lots.
Samsung crammed into the 15.36TB drive 512 of its 256Gb V-NAND memory chips stacked 16 layers high to form a single 512GB package, with a total of 32 NAND flash packages. Along with all that non-volatile memory, Samsung also included 16GB of DRAM and used specially designed firmware that can access large amounts of high-density NAND flash concurrently.
In Samsung's V-NAND chip, each cell utilizes the same 3D Charge Trap Flash (CTF) structure in which the flash cell arrays are stacked vertically to form a 48-storied mass electrically connected through 1.8 billion channel holes vertically punching through the arrays using a special etching technology.
In total, each V-NAND chip contains more than 85.3 billion cells. They each can store 3 bits of data, resulting in 256 billion bits of data -- in other words, 256Gb on a chip.
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