Intel is not the first to stack cells; Samsung started doing it in 2013. Intel said it has managed to cram more storage into smaller packages with an underlying mechanism called floating gate, while Samsung uses technology called trap-charge.
The companies will continue to cram more bits into cells in an effort to offer more storage in mobile devices, PCs and servers. Intel and Micron are researching new techniques to cram four bits per cell.
The 256-gigabit MLC flash storage is shipping to testers, while the 384Gb TLC version will ship to testers in a few months. Mass production of both flash chips will begin in the fourth quarter this year.
Sign up for CIO Asia eNewsletters.